Technology |
|
IPL |
Diode Laser |
LED |
Light source features |
Light source |
Xenon lamp |
Diode laser bars |
LED chips |
wavelength |
Wide spectrum 610nm-900nm |
Single wavelength 755/808nm/1064nm |
Narrow spectrum 780-850nm |
|
Light power |
5-10kw |
320-1000w |
840w |
|
Light emitting area shape |
Columnar |
Line |
Surface |
|
Pulse lifespan |
10000-30000shots |
8-30million shots |
60-100 million shots |
|
Operation |
Operation mode |
Stamp |
Stamp/Repeat |
Stamp/Repeat |
Energy density |
1-40j/cm2 |
Stamp:50-100cm2
Repeat:5-12J/cm2@10Hz |
Stamp:50-100cm2
Repeat:5-12J/cm2@10Hz |
|
Maintenance |
Handle |
Always need change light tube |
Laser generator is easily damaged, need replace every 1 to 2 years |
If normal use and regular maintenance, handle has the same lifespan as device |
Filter |
No need |
Need often change filter and deionizer, if not, laser generator is easily damaged |
No need |
|
Cooling water |
Drinking water |
Special deionized water or coolant |
Drinking water |
Product Name |
iMED_LED |
Light source |
LED |
Light spectrum |
NIR |
Light power |
800W |
Pulse width |
10-300ms |
Energy density |
1-100J/cm2 |
Frequency |
1-10Hz |
Skin type |
I-VI |
Operation mode |
Stamp, Repeat |
Spot size |
15*15mm2 |
Cooling system |
TEC Sapphire contact cooling/ Water cooling |
Cooling temperature |
15℃ - 10℃ |
Size |
50*46*35cm |
Net weight |
25KG |
|
Diode laser |
LED |
LED Advantages |
Thermal damage |
Light power |
Similar |
|
Thermal power |
Similar |
||
Chip size |
1*10mm |
7.5*7.5mm |
|
Conclusion |
Similar total thermal power, LED has bigger heat dissipation are and smaller heat flow density. |
||
Heat transfer patch |
Pass to the bottom and rear Average path is 1.5mm |
Pass to the bottom Average path is just 0.2mm |
|
Conclusion |
LED has very short heat transfer path, lower thermal resistance and much higher efficiency of heat dissipation. |
||
Mechanical damage |
Stress |
Rectangle, high length-width ratio. Under stress of thermal deformation and thermal fatigue, chips easily desoldering or broken in
pulsed working |
Square, 1:1 length-width ratio. Extra thin chip and large soldering area firmly but low stress. |
Conclusion |
Because of chip structure, LED chip’s stress is smaller than diode laser |
||
Optical damage |
Light power |
Similar |
|
Light emitting area |
Size 0.01*0.1mm High brightness, foreign body pollution can cause light-emitting surface burned |
Size 5*5mm Brightness is just similar to normal LED lamp of flashlight, slight dust will not being ignited to burn the lighting
surface |
|
|
Conclusion |
Because of surface emitting, the brightness of LED light emitting area is much smaller than diode laser. |
|
Chain damage |
|
Not like diode laser, for LED chips, single area’s failure does not affect other emitting area |